ZnO iN-mhando semiconductor zvinhu zvine bhendi hombe gap (3.37eV) uye yakakwira exciton inosunga simba (60 meV), yakakwira maerekitironi kufamba uye kupisa kwemhepo.Panguva imwecheteyo, inewo kugona kugadzirira Iine zvakanakira mutengo wakaderera, kwete-chepfu, uremu huremu, uye kuderera.Sechinhu chinoshanda, ine tarisiro yakakura yekushandisa.Iine huwandu hwakawanda hwemashandisirwo muminda yekunzwa kwegesi, luminescence, catalysis, etc. Panguva imwecheteyo, zinc oxide ine dielectric yakakura inogara mumunda we electromagnetic.Yakanakisa dielectric kurasikirwa uye semiconductor kuita, iri yakanakisa wave inonwisa zvinhu.
Iyo microwave absorption performance inowanzo enderana nekuoma kwezvinhu kupinza, yakaoma mvumo, uye impedance yekufananidza.Aya ma paramita anogona kugadziriswa nekuumbwa kwechinhu, morphology, saizi, nezvimwe.
Zvidzidzo zvakaona kuti imwe ZnO ine yakakosha morphology inotaridza kutaridza zvirinani kunwisa zvivakwa
Doping ine shanduko yesimbi ions muZnO, kana kusanganisa nekabhoni-based inonwisa zvinhu inogona kusuma kuita kwakanakisa kwezvimwe zvinotora zvinhu.

Pamusoro pane dzidziso kubva kuvatsvaguri kune yako referensi chete, yakadzama application ingada kuyedza kwako, ndatenda.