D 100-500nm L 50-100um beta Silicon carbide SiC nanowire

I-Silicon carbide nanowires, ububanzi D 100-500nm, ubude be-L 50-100um, ubunyulu 99+, igrey-green.

Iipropathi ezibonakalayo ze-silicon carbide nanowires: uhlobo lwe-cubic crystal, oluluhlobo lwekristale efanayo nedayimani, yintshebe ephezulu-efana nekristale enye ene-dimensional single enamandla omatshini aphezulu njengamandla aphezulu kunye nemodulus ephezulu.Yenye yezona zinto zomeleza kwaye ziqina.

Iipropathi zekhemikhali ze-silicon carbide nanowires: ukumelana nokunxiba, ukumelana nobushushu obuphezulu, ukuxhathisa ukothuka okukhethekileyo kwe-thermal, ukumelana nokugqwala, ukumelana nemitha.

Kwakhona sineebhovu ze-SiC kunye ne-SiC nanopowder, i-SiC sub-micron powder, i-SiC micron powder enikezelwayo.

Ukuba unomdla wamkelekile ukubuza ngeenkcukacha ezithe vetshe, enkosi.

Inkampani yethu iGuangzhou Honwwu Material Techonology yenye yeemveliso eziphambili zaseTshayina kunye nomthengisi wee-nanomaterials.Sangena kwimizi-mveliso ye-nano ukususela ngo-2002, iminyaka engaphezu kwe-16 yamava, siye saphuhlisa iteknoloji yemveliso ephucukileyo kunye nezixhobo, inkqubo yokulawula umgangatho we-strick, uchungechunge olupheleleyo lwemveliso, kunye nokuqokelela igama lethu le-HongWu Brand kwimarike yasekhaya kunye neyezizwe ngezizwe.

Intsebenziswano yexesha elide yokuphumelela yindlela esisebenzisana ngayo namaqabane ethu.

Singabavelisi bokuqala basekhaya kunye nabanikezeli beBeta SiC whisker powder/Beta silicon carbide whisker., Udidi lwe-βi-silicon carbide whiskers esiyivelisileyo yintshebe ephezulu-efana (i-one-dimensional) yekristale enye.NjengeIkristale yeathom, enoxinano oluphantsi, indawo yokunyibilika ephezulu, amandla aphezulu, imodulus ephezulu q.ubukho, ukwanda kwe-thermal ephantsi, kunye nokunxiba, ukuxhathisa ukubola, ubushushu obuphezulu, ukumelana ne-oxidation akunye nezinye iimpawu ezibalaseleyo.

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