I-Cubic (Beta) SiC powder sub-micron usayizi 0.5um for conductive ezishisayo

Incazelo emfushane:

I-Silicon carbide inezici zokumelana nokugqwala, ukumelana nokushisa okuphezulu, amandla aphezulu, ukuguquguquka okuhle kwe-thermal, ukumelana nomthelela, njll. Ngesikhathi esifanayo, inezinzuzo ze-conductivity ephezulu ye-thermal, ukumelana ne-oxidation, nokuzinza okuhle kokushisa.


Imininingwane Yomkhiqizo

I-Cubic (Beta) SiC Powder Sub-Micron Size 0.5um Ye-Thermal Conductive

Usayizi 0.5 um
Uhlobo I-Cubic ( Beta )
Ubumsulwa 99%
Ukubukeka impushana eluhlaza grey
Usayizi wokupakisha 1kg/isikhwama, 20kg/isigubhu.
Isikhathi sokuthumela kuncike enanini

Incazelo Eningiliziwe

Izinto ze-polymer zinezinzuzo zokuminyana okuphansi, ukucutshungulwa kalula, nokufakwa kahle kukagesi.Asetshenziswa kakhulu emikhakheni efana nokuhlanganisa nokupakishwa kwama-microelectronics, imishini kagesi, nokonga amandla e-LED.Ngokuvamile, ama-polymers awabambisi abampofu bokushisa.Ngokuqondene nezinto zokuvikela ukushisa, amandla azo okukhipha ukushisa aphenduka inkinga yebhodlela, futhi kunesidingo esiphuthumayo sokulungisa izinto ezihlanganisiwe ze-polymer conductivity ezishisayo ezinezakhiwo ezinhle kakhulu ezibanzi.

I-Silicon carbide inezici zokumelana nokugqwala, ukumelana nokushisa okuphezulu, amandla aphezulu, ukuguquguquka okuhle kwe-thermal, ukumelana nomthelela, njll. Ngesikhathi esifanayo, inezinzuzo ze-conductivity ephezulu ye-thermal, ukumelana ne-oxidation, nokuzinza okuhle kokushisa.

Abacwaningi basebenzise i-silicon carbide njenge-thermal conductive filler ukugcwalisa i-epoxy, futhi bathola ukuthi i-nano-silicon carbide ingakhuthaza ukuphulukiswa kwe-epoxy resin, futhi izinhlayiya ze-silicon carbide cishe zenze indlela yokuqhuba okushisayo noma iketango lenethiwekhi elishisayo ngaphakathi kwesistimu ye-resin. , ukunciphisa isilinganiso sangaphakathi se-void ye-epoxy resin nokuthuthukisa i-epoxy resin.I-conductivity yomshini kanye ne-thermal yezinto ezibonakalayo.

Ezinye izifundo zisebenzise i-ejenti yokuhlanganisa i-silane, i-stearic acid kanye nenhlanganisela yazo njengeziguquli ukuze kufundwe imiphumela yeziguquli ezihlukene kokuqukethwe okuqinile, inani lokumuncwa kwamafutha kanye ne-thermal conductivity ye-β-SiC powder.Imiphumela yokuhlola ibonisa ukuthi umphumela wokuguqulwa we-KH564 ku-ejenti yokuhlanganisa i-silane usobala kakhulu;ngocwaningo lwe-stearic acid kanye nenhlanganisela yezilungisi ezimbili ezingaphezulu, imiphumela ibonisa ukuthi umphumela wokuguqula uthuthukiswa nakakhulu uma uqhathaniswa nesilungisi esisodwa, futhi ubulukhuni buphezulu.Umphumela we-fatty acid kanye ne-KH564 ungcono, futhi ukuqhutshwa kokushisa kufinyelela ku-1.46 W/(m·K), okuyi-53.68% ephakeme kunaleyo ye-β-SiC engashintshiwe kanye ne-20.25% ephakeme kunaleyo yokuguqulwa okukodwa kwe-KH564.

Ngenhla ngereferensi yakho kuphela, imininingwane izodinga ukuhlolwa kwakho, ngiyabonga.


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